Proceedings of the 13th International Conference on Defects in Semiconductors

absorption acceptor activation energy amorphous annealing antisite Appl atoms band gap binding energy boron Burgers vector calculations carbon carrier centers chalcogen charge cluster coesite complexes concentration conduction band configuration crystal curve dangling bonds deep level density dependence diffusion dislocation DLTS doped dose EBIC effect electrical electron irradiation emission excitation exciton experimental Figure formation GaAs grain boundaries hydrogen hyperfine implanted impurity intensity interaction interface interstitial oxygen ion implantation ionization irradiation isotope Kimerling laser lattice layer Lett loops luminescence material measurements mechanism migration muonium n-type observed obtained optical orbital oxygen pairs parameters peak phonon photoluminescence Phys point defects precipitates recombination resonance samples self-diffusion self-interstitials semiconductors shown in Fig shows silicon Solid spectra spectrum spin splitting stacking fault stress structure surface symmetry technique thermal donor tion transition trap vacancy valence band values wafers