Proceedings of the 13th International Conference on Defects in Semiconductors

absorption acceptor activation energy amorphous annealing antisite Appl atoms band gap binding energies boron Burgers vector calculations carbon carrier centers chalcogens charge cluster coesite concentration conduction band configuration crystal curves dangling bonds defect processes density dependence diffusion dislocation DLTS dopant doping dose EBIC effect electrical electron irradiation emission energy levels excited excitons experimental Figure formation function GaAs grain boundaries hydrogen implanted impurity interaction interface interstitial oxygen ion implantation ionization isotope Kimerling laser lattice layer Lett loops luminescence material measurements mechanism migration muonium n-type observed obtained optical orbital oxygen pairs parameters peak phonon photoluminescence Phys point defects precipitates recombination relaxation samples self-diffusion self-interstitials self-trapped semiconductors shown in Fig shows silicon Solid spectra spectrum spin stacking fault stress structure studies surface symmetry technique thermal donor tion transition trapped vacancy valence band values wafers