Proceedings of the 13th International Conference on Defects in Semiconductors, Volume 13

absorption activation annealing appears Appl associated atoms band bond calculations carbon carrier centers charge cluster complexes concentration configuration corresponding crystal deep defect density dependence determined diffusion direction discussed dislocation DLTS donor doped effect electrical electron emission energy excitation experimental experiments field Figure formation function GaAs given grain boundaries higher hydrogen implanted impurity increase indicate induced intensity interaction interface interstitial Introduction irradiation lattice layer Lett lower luminescence material measurements mechanism method migration observed obtained occur optical orbital oxygen pairs peak Phys position possible present produced range recombination References region reported respectively samples semiconductors shown in Fig shows signal silicon similar Solid spectra spectrum splitting stress structure surface symmetry technique temperature thermal tion transition trap vacancy values