Proceedings of the 13th International Conference on Defects in Semiconductors, Volume 13

absorption acceptor activation energy alloy amorphous annealing antisite Appl atoms band gap binding energy bond length Burgers vector calculations capture carrier chalcogens charge concentration conduction band configuration crystal curves dangling bonds defect processes Defects in Semiconductors density dependence diffusion dislocation DLTS donor dopant doping effect electric emission energy levels enhanced enthalpy entropy equilibrium excitation excitons experimental experiments Figure function GaAs grain boundaries high temperature implanted impurity interaction interface interstitial intrinsic ion implantation ionization Kimerling laser lattice relaxation layer Lett lifetime loops luminescence measurements mechanism n-type observed obtained optical orbital oxygen pairs parameters phonon photoluminescence Phys point defects positron precipitates recombination recombination centers samples self-diffusion self-interstitials self-trapped semiconductors shown in Fig silicon Solid spectra spectrum stacking fault stress structure surface symmetry technique thermal tion total energy transition trapped vacancy values wafers