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" ACKNOWLEDGEMENTS This work was partly supported by a Grant-in-Aid for Scientific Research (A) (No. "
Environmental Aspects of Electrochemical Technology: Proceedings of the ... - Pagina 80
a cura di - 2000 - 248 pagine
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Adhesion Science and Technology: Proceedings of the International Adhesion ...

Hiroshi Mizumachi - 1997 - 950 pagine
...estimate endurance limit with a little higher accuracy than that based on the maximum principal stress. Acknowledgements This work was partly supported by a Grant-in-Aid for Scientific Research C (No. 04650086), from the Ministry of Education, Science and Culture, Japan in the fiscal year of 1992...
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Compound Semiconductors 1998: Proceedings of the Twenty-Fifth International ...

H Sakaki, J.C. Woo, N Yokoyama, Y Harayama - 1999 - 926 pagine
...in the photoluminescence intensity is caused by the increase in the Auger recombination coefficient Acknowledgements This work was partly supported by a Grant-in-Aid for Scientific Research (C) and the Promotion and Mutual Aid Corporation for Private Schools of Japan on "The Science Research...
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Science and Technology of High Pressure: Proceedings of the International ...

Murli H. Manghnani, W. J. Nellis, Malcolm F. Nicol - 2000 - 650 pagine
...experiment is possible for relatively low-Z elements such as phosphorus at multimegabar pressures. Acknowledgements This work was partly supported by a Grant-in-Aid for Scientific Research (Grant Nos. 10440093 and 1 1440125) from the Ministry of Education, Science and Culture, Japan and...
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Compound Semiconductors 2001

Y Arakawa, Y. Hirayama, K Kishino, H Yamaguchi - 2002 - 908 pagine
...wish to thank M. Karasaki for MBE growth of the sample and K. Ueda for low-temperature measurements. This work was partly supported by a Grant-in-Aid for Scientific Research (C). References ( 1 ] Dagata J A. Schneir J, Harary HH, Evans C J. Postek MT and Bennett J 1990 Appl. Phys....
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Silicon Materials: FSRC, August 13-15, 2001, La Jolla, California

V.Alexander Stefan (Editor-in-Chief) - 2002 - 100 pagine
...ultrathin Si layer and that the quantum mechanical effects are actually effective in Si nano-devices. Acknowledgements This work was partly supported by a Grant-in-Aid for Scientific Research from the Japan Society for the Promotion of Science and by CREST of Japan Science and Technology. References...
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Silicon Nitride and Silicon Dioxide Thin Insulating Films VII: Proceedings ...

Electrochemical Society. Meeting - 2003 - 652 pagine
...continuous film is formed by the coalescence of two-dimensional islands. It was found that the MIS 505 ACKNOWLEDGEMENTS This work was partly supported by a Grant-in-Aid for Scientific Research (A) (No. 133050005) from the Ministry of Education, Culture, Sports, Science, and Technology of Japan....
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Silicon Nitride and Silicon Dioxide Thin Insulating Films: Proceedings of ...

2003 - 660 pagine
...properties indicate that the nitride films formed by radical nitrogen are applicable to gate insulators. ACKNOWLEDGEMENTS This work was partly supported by a Grant-in-Aid for Scientific Research (A) (No. 133050005) from the Ministry of Education, Culture, Sports, Science, and Technology of Japan....
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Ultrafast Phenomena XIV: Proceedings of the 14th International Conference ...

Takayoshi Kobayashi - 2005 - 954 pagine
...samples. Their control mechanisms can be interpreted using a statistically averaged effective potential. Acknowledgements. This work was partly supported by a Grant-in-Aid for Scientific Research on Priority Areas, "Control of Molecules in Intense Laser Fields" from the METX of the Japanese Government....
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Low Molecular Mass Gelators: Design, Self-Assembly, Function

Frederic Fages - 2005 - 304 pagine
...consist of geometrically well-defined threedimensional assemblies of nucleobase-containing molecules. Acknowledgements This work was partly supported by a Grant-in-Aid for Scientific Research (grant nos. 14045211 and 14350482) from the Ministry of Education, Science, Sports and Culture, Japan...
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Frontiers in Magnetic Materials

A. V. Narlikar - 2005 - 832 pagine
...will discover new superconducting ladder materials that are “cleaner” than SrI4¿Ca¿Cu 2 4O4I. ACKNOWLEDGEMENTS This work was partly supported by a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology, Japan. Two of authors (NM...
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