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carriers of electricity
tlie pn junction
5 other sections not shown
admittance amplifier applied approximation atoms base current base region base-width modulation behavior bias capacitance carrier density characteristic charge of holes circuit collector current collector junction common-emitter orientation conduction band conduction electrons coulomb current flowing cutoff frequency density of carriers density of electrons density of holes density of minority device diffusion model diode model direct current distribution dopant doping drift electron mobilance electron storance emitter current emitter-base equations equilibrium density evaluate excess density exp st extrinsic elements forbidden band forward-biased germanium hole current hole storance holes and electrons illustrated in Fig impurity incremental intrinsic model intrinsic transistor linear lumped model minority carriers node ohmic contacts ohms one-lump model parallelepiped parameters pn junction pnHc pnHd recombination current relationships representation represented reverse reverse-biased saturation current semiconductor material shown in Fig signal simply small-signal space-charge terminal transient transistor switch transition region two-port values variables zero