Proceedings of the 13th International Conference on Defects in Semiconductors, Volume 13

absorption activation energy amorphous annealing antisite Appl band gap binding energy bond length Burgers vector calculations capture carbon carrier centers chalcogen charge cluster coesite concentration conduction band configuration corresponding crystal curve dangling bonds Defects in Semiconductors density dependence diffusion dislocation DLTS dopant doping EBIC effect electrical electron irradiation emission enhanced enthalpy entropy equilibrium excitation excitons experimental experiments Figure function GaAs grain boundaries high temperature hydrogen implanted impurity increase interaction interface interstitial oxygen intrinsic ion implantation ionization Kimerling laser layer Lett lifetime loops low temperature luminescence measurements mechanism observed obtained optical oxidation oxygen p-type pairs parameters phonon photoluminescence Phys point defects positron precipitates recombination samples self-diffusion semiconductors shown in Fig silicon Solid spectra spectrum stacking fault stress structure surface symmetry technique thermal donor tion total energy transition trapped values wafers