Defect Recognition and Image Processing in Semiconductors 1997: Proceedings of the seventh conference on Defect Recognition and Image Processing, Berlin, September 1997

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CRC Press, 1 gen 1998 - 524 pagine
Defect Recognition and Image Processing in Semiconductors 1997 provides a valuable overview of current techniques used to assess, monitor, and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. This volume addresses advances in defect analyzing techniques and instrumentation and their application to substrates, epilayers, and devices. The book discusses the merits and limits of characterization techniques; standardization; correlations between defects and device performance, including degradation and failure analysis; and the adaptation and application of standard characterization techniques to new materials. It also examines the impressive advances made possible by the increase in the number of nanoscale scanning techniques now available. The book investigates defects in layers and devices, and examines the problems that have arisen in characterizing gallium nitride and silicon carbide.
 

Sommario

Long range forces acting on AFM tips at semiconductor surfaces
9
Optical and topographical imaging of subwavelength IIIV surface defects
23
JWP Hsu MH Gray and Q Xu invited 22
37
Submicron profiling using quasimonochromatic light interferometry
51
In situ scanning electron microscopy of surface roughening processes in GaAs
67
Characterization of decomposition in GaxInxAsy P₁y layers by Zcontrast
83
Optical methods
99
Detection and classification of visible crystal defects on unpatterned silicon
115
High resolution photoinduced transient spectroscopy of semiinsulating epitaxial
225
Applications of image analysis for the quantitative characterization
237
Si and SiGe mixed crystals
255
Characterization of the new type of structural defects in Si by the scanning optical
269
Characterization of asgrown defects in silicon
285
The optoelectronic characterization of silicon by excess free charge carrier
301
Effects of light illumination on electron traps in hydrogenimplanted ntype silicon
305
Studies of buried SiC1xAINx layers formed by coimplantation of N+
335

Characterization of denuded zones around dislocations in doped GaAs by phase
119
Mapping
133
Nondestructive wafer inspection utilizing SQUIDS
149
Defect mapping of GaAs with low dislocation density
165
Xray methods
177
Novel applications of xray topography for studying materials with extreme
191
Comparison between studies of photoluminescence mapping and etching
209
Timeresolved photoluminescence characterization of GaN layers grown
351
S Mahajan invited
367
Coexistence of the CuPt type ordering and the fine contrast modulation
381
Orientation dependent indium incorporation in MOVPE grown InGaAsGaAs
397
EL3 related recharging effects in middle resistivity GaAs
413
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