Defect Recognition and Image Processing in Semiconductors 1997: Proceedings of the seventh conference on Defect Recognition and Image Processing, Berlin, September 1997CRC Press, 1 gen 1998 - 524 pagine Defect Recognition and Image Processing in Semiconductors 1997 provides a valuable overview of current techniques used to assess, monitor, and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. This volume addresses advances in defect analyzing techniques and instrumentation and their application to substrates, epilayers, and devices. The book discusses the merits and limits of characterization techniques; standardization; correlations between defects and device performance, including degradation and failure analysis; and the adaptation and application of standard characterization techniques to new materials. It also examines the impressive advances made possible by the increase in the number of nanoscale scanning techniques now available. The book investigates defects in layers and devices, and examines the problems that have arisen in characterizing gallium nitride and silicon carbide. |
Sommario
Long range forces acting on AFM tips at semiconductor surfaces | 9 |
Optical and topographical imaging of subwavelength IIIV surface defects | 23 |
JWP Hsu MH Gray and Q Xu invited 22 | 37 |
Submicron profiling using quasimonochromatic light interferometry | 51 |
In situ scanning electron microscopy of surface roughening processes in GaAs | 67 |
Characterization of decomposition in GaxInxAsy P₁y layers by Zcontrast | 83 |
Optical methods | 99 |
Detection and classification of visible crystal defects on unpatterned silicon | 115 |
High resolution photoinduced transient spectroscopy of semiinsulating epitaxial | 225 |
Applications of image analysis for the quantitative characterization | 237 |
Si and SiGe mixed crystals | 255 |
Characterization of the new type of structural defects in Si by the scanning optical | 269 |
Characterization of asgrown defects in silicon | 285 |
The optoelectronic characterization of silicon by excess free charge carrier | 301 |
Effects of light illumination on electron traps in hydrogenimplanted ntype silicon | 305 |
Studies of buried SiC1xAINx layers formed by coimplantation of N+ | 335 |
Characterization of denuded zones around dislocations in doped GaAs by phase | 119 |
Mapping | 133 |
Nondestructive wafer inspection utilizing SQUIDS | 149 |
Defect mapping of GaAs with low dislocation density | 165 |
Xray methods | 177 |
Novel applications of xray topography for studying materials with extreme | 191 |
Comparison between studies of photoluminescence mapping and etching | 209 |
Timeresolved photoluminescence characterization of GaN layers grown | 351 |
S Mahajan invited | 367 |
Coexistence of the CuPt type ordering and the fine contrast modulation | 381 |
Orientation dependent indium incorporation in MOVPE grown InGaAsGaAs | 397 |
EL3 related recharging effects in middle resistivity GaAs | 413 |
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Defect Recognition and Image Processing in Semiconductors 1997: Proceedings ... J. Doneker Anteprima limitata - 2017 |
Defect Recognition and Image Processing in Semiconductors 1997: Proceedings ... J. Doneker Anteprima limitata - 2017 |
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1997 IOP Publishing AlGaAs annealing Appl atoms band gap beam birefringence Burgers vector carrier cathodoluminescence characterization charge chemical clusters cm² cm³ concentration contrast Crystal Growth curve devices diffraction diffusion dislocations distribution DLTS dopant doping DRIP 97 EBIC electric field emission energy epilayers epitaxial etch pits experimental Figure formation GaAs grown HEMT heterostructures illumination impurity InGaAs intensity interface investigated IOP Publishing Ltd irradiation laser diodes lattice layer Lett light mapping material measurements method micropipes misfit misfit dislocations MOCVD n-type nanometer NOBIC observed obtained optical oxide oxygen p-n junctions Paper presented parameters peak phase photoluminescence Phys plane point defects precipitates presented at DRIP probe recombination region resistivity resolution sample scanning scattering semiconductor shown in Fig shows signal spatial spectra spectroscopy structure substrate surface technique temperature thermal thickness topography transmission electron microscopy traps voltage Weyher X-ray