Practical Scanning Electron Microscopy: Electron and Ion Microprobe AnalysisJoseph Goldstein Springer Science & Business Media, 6 dic 2012 - 582 pagine In the spring of 1963, a well-known research institute made a market survey to assess how many scanning electron microscopes might be sold in the United States. They predicted that three to five might be sold in the first year a commercial SEM was available, and that ten instruments would saturate the marketplace. In 1964, the Cambridge Instruments Stereoscan was introduced into the United States and, in the following decade, over 1200 scanning electron microscopes were sold in the U. S. alone, representing an investment conservatively estimated at $50,000- $100,000 each. Why were the market surveyers wrongil Perhaps because they asked the wrong persons, such as electron microscopists who were using the highly developed transmission electron microscopes of the day, with resolutions from 5-10 A. These scientists could see little application for a microscope that was useful for looking at surfaces with a resolution of only (then) about 200 A. Since that time, many scientists have learned to appreciate that information content in an image may be of more importance than resolution per se. The SEM, with its large depth of field and easily that often require little or no sample prepara interpreted images of samples tion for viewing, is capable of providing significant information about rough samples at magnifications ranging from 50 X to 100,000 X. This range overlaps considerably with the light microscope at the low end, and with the electron microscope at the high end. |
Sommario
1 | |
6 | |
14 | |
Electron Optics | 21 |
Electron Lenses | 29 |
Electron Probe Diameter d vs Electron Probe Current i | 40 |
Chapter III | 41 |
Electron BeamSpecimen Interaction | 49 |
Solid State XRay Detectors | 274 |
A Comparison of Crystal Spectrometers with Solid State | 281 |
The Analysis of XRay Spectral Data | 285 |
Chapter VIII | 299 |
Characterizing the XRayExcited Volume | 305 |
Chapter IX | 326 |
Atomic Number Correction kz | 343 |
Summary Discussion of the ZAF Method | 350 |
Emitted ElectronsBackscattered Electrons | 57 |
Emitted ElectronsLowEnergy Electrons | 64 |
Auger Electrons | 72 |
Chapter IV | 78 |
Image Formation in the Scanning Electron | 95 |
A EverhartThornley Detector | 101 |
A Signal Limitations | 115 |
B Resolution Limitation due to BeamSpecimen Interactions | 124 |
Image Defects | 143 |
Contrast Mechanisms of Special Interest | 149 |
Magnetic Contrast in the SEM | 180 |
Voltage Contrast | 198 |
Specimen Preparation Special Techniques | 211 |
Dynamic Experiments in the SEM | 220 |
Applications of the SEM | 228 |
Examination of Magnetically Written Information with | 247 |
XRay Spectral Measurement | 263 |
The Empirical Method for Quantitative Analysis | 352 |
Computational Schemes for Quantitative XRay | 373 |
Data Reduction Based on the Hyperbolic Method | 388 |
Chapter XI | 400 |
Specimen Preparation for Quantitative Analysis | 418 |
Applications Involving Compositional Analysis | 426 |
Special Techniques in the XRay Analysis | 435 |
Precision and Sensitivity in XRay Analysis | 443 |
Soft XRay Emission Spectra | 465 |
Chapter XIII | 488 |
Analysis | 514 |
Summary | 524 |
Ion Microprobe | 532 |
Qualitative Analysis | 541 |
Quantitative Analysis | 548 |
573 | |
Altre edizioni - Visualizza tutto
Practical Scanning Electron Microscopy: Electron and Ion Microprobe Analysis Joseph Goldstein,Harvey Yakowitz Visualizzazione estratti - 1975 |
Practical Scanning Electron Microscopy: Electron and Ion Microprobe Analysis Joseph Goldstein Anteprima non disponibile - 2011 |
Practical Scanning Electron Microscopy: Electron and Ion Microprobe Analysis Joseph Goldstein Anteprima non disponibile - 2011 |
Parole e frasi comuni
A/cm² absorption alloy analyzed angle Annual SEM Symposium aperture atomic number axis background backscattered electrons beam current boron calculated Castaing cathode cathodoluminescence Chapter characteristic coefficient composition continuum correction count rate crystal decreases depth detector diameter distribution domains effect electron beam electron channeling electron gun electron microprobe electron microscope electron probe Electron Probe Microanalysis emitted energy energy-dispersive EPMA equation excitation filament film final lens fluorescence focused function IITRI incident increases instrument K. F. J. Heinrich magnetic contrast magnetic field magnification mass material matrix measured method Microanalysis obtained particles peak phase photons Phys produced quantitative radiation range ratio resolution sample scanning electron scanning electron microscope scattering secondary electrons shown in Figure signal silicon specimen current spectrometer spectrum sputtering sputtering yield standard substrate surface technique temperature thickness tilt tion trajectories tron voltage wavelength x-ray analysis x-ray intensity X-Ray Optics Yakowitz